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Description du produit
Ordinateurs, Software & Peripherals /  Composants de Système /  Mémoire d`Accès aléatoire (RAM) /  AINSI-DIMM / 
Information sur le fabricant
Société :
AREA SOUTH ELECTRONIC CORP.
 
Adresse :
4F-2.,NO.256,Yangguang St.,Neihu Dist., Taipei
 
Téléphone :
+886-2-26571135

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Clockspeed: DDR333 PC2700 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
RéserverRéserver un produit site du fabricantSite du fabricant




D'autres marchandises de ce producteur :
DDR SDRAM SODIMM 256 Mo
DDR SDRAM SODIMM 256MB (DDR SDRAM SODIMM 256 Mo)
Clockspeed: DDR333 PC2700 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM SODIMM 256 Mo
DDR SDRAM SODIMM 256MB (DDR SDRAM SODIMM 256 Mo)
Clockspeed: DDR333 PC2700 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM SODIMM 256MB MEMORY MODULE
DDR SDRAM SODIMM 256MB MEMORY MODULE (DDR SDRAM SODIMM 256MB MEMORY MODULE)
Clockspeed: DDR266 PC2100 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM SODIMM 256MB MEMORY MODULE
DDR SDRAM SODIMM 256MB MEMORY MODULE (DDR SDRAM SODIMM 256MB MEMORY MODULE)
Clockspeed: DDR266 PC2100 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM SODIMM 256MB MEMORY MODULE
DDR SDRAM SODIMM 256MB MEMORY MODULE (DDR SDRAM SODIMM 256MB MEMORY MODULE)
Clockspeed: DDR266 PC2100 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM unbuffered DIMM de 256 Mo
DDR SDRAM UNBUFFERED DIMM 256MB (DDR SDRAM unbuffered DIMM de 256 Mo)
Clockspeed: DDR400 PC3200 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM unbuffered DIMM de 256 Mo
DDR SDRAM UNBUFFERED DIMM 256MB (DDR SDRAM unbuffered DIMM de 256 Mo)
Clockspeed: DDR400 PC3200 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
DDR SDRAM unbuffered DIMM de 256 Mo
DDR SDRAM UNBUFFERED DIMM 256MB (DDR SDRAM unbuffered DIMM de 256 Mo)
Clockspeed: DDR400 PC3200 CAPACITE: 256 Mo Configuration: 32M * 64 Latence CAS: CL2.5 TENSION: 2.5V ECC: NON ECC
Mémoire iFlash Pen Drive
iFlash Memory Pen Drive (Mémoire iFlash Pen Drive)
Spécifications - Type de mémoire intégrée: NAND Flash Type-Taille de la mémoire: 53,5 mm x 18mm x 8mm (L x P x H) Poids: 11g Data Cy es:> 100.000 fois 1.USB 2.0 haut débit des données taux de t

"AINSI-DIMM":
DDR SO-DIMM
DDR SO-DIM...
Memory Moudle Ram Moudle
Memory Mou...
 
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