Silicon Epitaxial Wafer without Buried Layer

3``, 4``, 5`` & 6`` Silicon Epitaxial Wafer without Buried Layer ()Single layer: N/N+, P/P+, P/N+, N/P+, N/N++ ()Multi layers: N/P/P+, P/P/P+, P/N/N+, N/N/N+, N/N/P+, ..etc. ()Epi-Layer resistance: 0.01 to 150 Ohm-cm ()Epi-Layer thickness: 1 to 200 um () () () ()

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Bipolar IC Foundry
	Material: 5`` Silicon wafer ()5 um, 1.5um DM technology ()Single/Double Buried-Layer ()Junction isolation ()NPN, LPNP, VPNP, zener diode ()Planarization: resist etch back ()Bvceo: 5~40V () ()

Power Mosfet Foundry
	Material: 5`` As Silicon wafer ()4 um, 1.2 um technology ()Epi layer N- ()Bvdss: 30V~900V ()Rds (on) (HV): sp

Silicon Epitaxial Wafer with Buried Layer
	4`` & 5`` Silicon Epitaxial Wafer with Buried Layer, for single & double buried-layer ()For N/N/P-, N/P-P-, N/N & P/P-, ..etc. () () () () () () ()

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