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Silicon Ingot
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Type: P/NDopant: B (boron)/P (phosphorus)Diameter (inch): 4"-8"Resistivity ( .cm): 0.5-60Oxygen content: ≤1.8 x 1, 018 atom/cm3Carbon content: ≤5.0 x 1, 016 atom/cm3Remarks:(1) The quality is
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Silicon Wafer
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Lapped waferDiameter: 4"-8"Thickness (μm): as per customer`s requestThickness tolerance (μm): 10TTV (μm): per SEMI standardWarp (μm): per SEMI standardEdge rounded chips(mm): ≤0.3Rem
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Silicon Wafer
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Lapped waferDiameter: 4"-8"Thickness (μm): as per customer`s requestThickness tolerance (μm): 10TTV (μm): per SEMI standardWarp (μm): per SEMI standardEdge rounded chips(mm): ≤0.3Rem
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Solar Panel
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30W polycrystalline solar panelPm: 30WVm: 17.5VIm: 1.72AVoc: 23.5VIsc: 2.20A
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Solar Panel
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30W polycrystalline solar panelPm: 30WVm: 17.5VIm: 1.72AVoc: 23.5VIsc: 2.20A
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Solar Panel
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It is 160WDimensions (mm): 1581*809*48The cells are 125*125, the Number of cell is 72, the max. system is DC 1000V, the voltage is 34.50V, the Im (A) is 4.64, the Voc (V) is 43.20, the Isc (A) is 5.07
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Semiconductor
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Type: P or NDopant: B or PDiameter (inch): 4-8Resistivity (Ω.cm): 1-60Thickness (μm): As per customer`s requestOxygen content: ≤1.8 x 1018 atom/cbmCarbon content: ≤5.0 x 1016 ato
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Solar Energy Product
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Module power: 10W-210WModule type: polysilicon or monosiliconOther quality: as per customer`s request
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