1.Introduction,,2.Ultra-thin Oixde Preparation ,,3.Intrinsic Properties of Thermal Oxide and Characterization , ,4.Oxide Reliability, ,5.Limits of Oxide Scaling, ,6.High-k Dielectric Technology

1.Introduction,,2.Ultra-thin Oixde Preparation ,,3.Intrinsic Properties of Thermal Oxide and Characterization , ,4.Oxide Reliability, ,5.Limits of Oxide Scaling, ,6.High-k Dielectric Technology

W q P A G W q L { A T { z T v | P W q N D q v T W q u D W q v ] C Q K X Q

1. n ~ H 2. ~ B J 3. { 4. e 5. ` N 6. 7. h

1.Introduction,,2.Lithographic Systems and Illumination ,,3.Resist Technology,,4.Modeling & Simulations,,5.Resolution Enhancement Technology,,6.Critical Issues and Solutions ,,7.Imaging the Future

1.Introduction,,2.Lithographic Systems and Illumination ,,3.Resist Technology,,4.Modeling & Simulations,,5.Resolution Enhancement Technology,,6.Critical Issues and Solutions ,,7.Imaging the Future

1.Introduction,,2.Lithographic Systems and Illumination ,,3.Resist Technology,,4.Modeling & Simulations,,5.Resolution Enhancement Technology,,6.Critical Issues and Solutions ,,7.Imaging the Future

1. Motive of low-k materials,,2. Kinds of low-k materials,,3. Mechanism of low-k materials,,4. Study on porous SiO2 (Sol-gel),,5. Integration between low-k and Cu,,6. Conclusion

1. Motive of low-k materials,,2. Kinds of low-k materials,,3. Mechanism of low-k materials,,4. Study on porous SiO2 (Sol-gel),,5. Integration between low-k and Cu,,6. Conclusion